rf power field effect transistor ldmos, 800?1700 mhz, 15w, 26v ? designed for broadband commercial applications up to 1.7ghz ? high gain, high efficiency and high linearity ? typical p1db performance at 960mhz, 26vdc, cw ? typical power output: 16.5w ? gain: 17.0db ? efficiency: 50% ? 10:1 vswr ruggedness at 15w, 26vdc, 960mhz MAPL-000817-015CPC package style 7/27/06 preliminary maximum ratings parameter symbol rating units drain?source voltage v dss 65 v dc gate?source voltage v gs +20, -20 v dc total power dissipation @ t c = 25 c p d 31.25 w storage temperature t stg -65 to +150 c junction temperature t j 150 c characteristic symbol thermal resistance, junction to case r jc max 4 unit oc/w thermal characteristics note? caution ?mos devices are susceptible to damage from electr ostatic charge. precaut ions in handling and packag- ing mos devices should be observed. MAPL-000817-015CPC features
rf power ldmos transistor, 800-1700 mhz, 15w, 26v MAPL-000817-015CPC 7/27/06 preliminary characteristic symbol min typ max unit dc characteristics @ 25oc drain-source breakdown voltage (v gs = 0 vdc, i d = 30 adc) v (br)dss 65 ? ? vdc gate quiescent voltage (v ds = 26 vdc, i d = 100 ma) v ds(q) 3 ? 5 vdc drain-source on-voltage (v gs = 10 vdc, i d = 1 a) v ds(on) ? 0.25 ? vdc rf functional tests @ 25oc (in m/a-com test fixture) (1) common source amplifier gain (v dd = 26 vdc, i dq = 150 ma, f = 960 mhz, p out = 15 w) g p ? 17 ? db drain efficiency (v dd = 26 vdc, i dq = 150 ma, f = 960 mhz, p out = 15 w) eff ( ? ) ? 50 ? % input return loss (v dd = 26 vdc, i dq = 150 ma, f = 960 mhz, p out = 15 w) irl ? -10 ? db output vswr tolerance (v dd = 26 vdc, i dq = 150 ma, f = 960 mhz, p out = 15 w, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test common source amplifier gain (v dd = 26 vdc, i dq = 150 ma, f = 1670 mhz, p out = 15 w) g p ? 13.0 ? db drain efficiency (v dd = 26 vdc, i dq = 150 ma, f = 1670 mhz, p out = 15 w) eff ( ? ) ? 50 ? % input return loss (v dd = 26 vdc, i dq = 150 ma, f = 1670 mhz, p out = 15 w) irl ? -10 ? db (1) device specifications obtai ned on a production test fixture. 2
rf power ldmos transistor, 800-1700 mhz, 15w, 26v MAPL-000817-015CPC 7/27/06 preliminary figure 1. 1620-1670 mh z test fixture schematic figure 2. 1620?1670 mhz test fixture component layout 3 c1,c11 tantalum surface mt. cap., 100 f, 35 v c2,c12 ceramic chip capacitor, 0.1 f c3,c13 ceramic chip capacitor, 1000 pf c4,c6,c14,c17 chip capacitor, 39 pf atc100a c5 chip capacitor, 1.8 pf atc100a c7,c8 chip capacitor, 1.0 pf atc100a c9,c10 chip capacitor, 2.7 pf atc100a c15 chip capacitor, 3.0 pf atc100a c16 chip capacitor, 3.3 pf atc100a j1,j2 sma connector, omni spectra 2052-5636-02 l1 inductor, 72 nh, coilcraft 0603 l2 inductor, 18.5 nh, coilcraft a05t p1,p2 connector, amp 640457-4 q1 transistor, MAPL-000817-015CPC r1 chip resistor (0805), 10k ohm r2 chip resistor (0805), 10 ohm z1 distributed microstrip element, 0.034? x 0.046? z2 distributed microstrip element, 0.092? x 0.046? z3 distributed microstrip element, 0.532? x 0.046? z4 distributed microstrip element, 0.080? x 0.026? z5 distributed microstrip element, 0.028? x 0.178? z6 distributed microstrip element, 0.216? x 0.178? z7 distributed microstrip element, 0.029? x 0.178? z8 distributed microstrip element, 0.077? x 0.178? z9 distributed microstrip element, 0.211? x 0.178? z10 distributed microstrip element, 0.029? x 0.178? z11 distributed microstrip element, 0.945? x 0.046? z12 distributed microstrip element, 0.125? x 0.046? pc board rogers (ro4350) duroid, 0.020:? thick, er=3.5, 1 oz copper both sides
rf power ldmos transistor, 800-1700 mhz, 15w, 26v MAPL-000817-015CPC 7/27/06 preliminary 4 graph 1. 1620, 1670mhz: cw power gain and drain efficiency vs. output power graph 2. 920, 940, 960mhz: cw power gain and drain efficiency vs. output power cw, 26v dc , i dq =150ma 0 2 4 6 8 10 12 14 16 18 20 57911131517 pout (w) gain (db) 10 15 20 25 30 35 40 45 50 55 60 drain efficiency (%) gain 1670mhz gain 1620mhz eff 1670mhz eff 1620mhz cw, 26v dc , i dq =150ma 0 2 4 6 8 10 12 14 16 18 20 57911131517 pout (w) gain (db) 10 15 20 25 30 35 40 45 50 55 60 drain efficiency (%) gain 1670mhz gain 1620mhz eff 1670mhz eff 1620mhz cw, 26v dc , i dq =150ma 10 12 14 16 18 20 22 24 30 31 32 33 34 35 36 37 38 39 40 41 42 43 pout (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) gain (920mhz) gain (940mhz) gain (960mhz) eff (920mhz) eff (940mhz) eff (960mhz) cw, 26v dc , i dq =150ma 10 12 14 16 18 20 22 24 30 31 32 33 34 35 36 37 38 39 40 41 42 43 pout (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) gain (920mhz) gain (940mhz) gain (960mhz) eff (920mhz) eff (940mhz) eff (960mhz)
rf power ldmos transistor, 800-1700 mhz, 15w, 26v MAPL-000817-015CPC 7/27/06 preliminary test fixture circuit dimensions package dimensions m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. visit www.macom.com for additional data sheets and product information. ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 5
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